| US 7,547,581 B2 | ||
| Manufacturing method of a semiconductor device to suppress generation of whiskers | ||
| Yumi Imamura, Tokyo (Japan); Kenji Yamamoto, Tokyo (Japan); and Tomohiro Murakami, Tokyo (Japan) | ||
| Assigned to Renesas Technology Corp., Tokyo (Japan) | ||
| Filed on Feb. 28, 2006, as Appl. No. 11/362,847. | ||
| Claims priority of application No. 2005-268904 (JP), filed on Sep. 15, 2005. | ||
| Prior Publication US 2007/0059916 A1, Mar. 15, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 23/48 (2006.01); H01R 43/00 (2006.01) | ||
| U.S. Cl. 438—123 [438/611; 29/827; 257/772; 257/E23.031; 257/E23.053] | 17 Claims |
| 1. A manufacturing method of a semiconductor device, comprising the steps of:
forming a plating film including Sn over a surface of a lead for external connection; and
performing heat treatment which melts the plating film without mounting the lead for external connection on a mounting substrate;
wherein in the step of performing heat treatment, a temperature more than or equal to a melting-point of the plating film
is held for 20 seconds or more.
|