| US 7,547,360 B2 | ||
| Reduction of carbon inclusions in sublimation grown SiC single crystals | ||
| Avinash K. Gupta, Basking Ridge, N.J. (US); Edward Semenas, Allentown, Pa. (US); and Ilya Zwieback, Washington Township, N.J. (US) | ||
| Assigned to II-VI Incorporated, Saxonburg, Pa. (US) | ||
| Filed on Sep. 27, 2007, as Appl. No. 11/904,593. | ||
| Claims priority of provisional application 60/847558, filed on Sep. 27, 2006. | ||
| Prior Publication US 2008/0115719 A1, May 22, 2008 | ||
| Int. Cl. C30B 25/12 (2006.01) | ||
| U.S. Cl. 117—90 [117/84; 117/88; 117/89; 117/92] | 13 Claims |
| 1. A SiC single crystal growth method comprising:
(a) providing a SiC single crystal seed and a polycrystalline SiC source material in spaced relation inside of a graphite
growth crucible;
(b) providing in the growth crucible at least one compound capable of forming SiO gas in the growth crucible during growth
of a SiC single crystal on the seed crystal; and
(c) heating the growth crucible whereupon the SiO gas forms and reacts with carbon in the growth crucible thereby avoiding
the introduction of carbon into the SiC single crystal before and during the growth thereof and the SiC source material vaporizes
and is transported via a temperature gradient in the growth crucible to the seed crystal where it precipitates and forms a
SiC single crystal.
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