US 7,546,681 B2
Manufacturing method for wiring circuit substrate
Tomoo Iijima, Tokyo (Japan); and Masayuki Ohsawa, Tokyo (Japan)
Assigned to Tessera Interconnect Materials, Inc., San Jose, Calif. (US)
Filed on Jul. 17, 2006, as Appl. No. 11/487,747.
Application 10/823611 is a division of application No. 10/139237, filed on May 07, 2002, granted, now 6,828,221, filed on Dec. 07, 2004.
Application 10/139237 is a division of application No. 09/685799, filed on Oct. 11, 2000, granted, now 6,528,874, filed on Mar. 04, 2003.
Application 11/487747 is a continuation of application No. 10/823611, filed on Apr. 14, 2004, granted, now 7,096,578, filed on Aug. 29, 2006.
Claims priority of application No. H11-289277 (JP), filed on Oct. 12, 1999; application No. H11-374462 (JP), filed on Dec. 28, 1999; and application No. 2000-142658 (JP), filed on May 16, 2000.
Prior Publication US 2006/0258139 A1, Nov. 16, 2006
Int. Cl. H05K 3/36 (2006.01)
U.S. Cl. 29—830  [29/846; 29/874; 29/884; 438/612; 438/616] 13 Claims
OG exemplary drawing
 
1. A method of making a microelectronic element comprising:
making a connection component, comprising:
providing a metal layer having a top surface and a bottom surface;
providing a dielectric layer over the top surface of said metal layer;
forming openings in said dielectric layer to expose portions of the top surface of said metal layer;
providing conductive elements atop said dielectric layer, at least some of said conductive elements extending through the openings in said dielectric layer and being in contact with said metal layer;
plating first conductive protrusions atop the at least some of said conductive elements extending through the openings in said dielectric layer, wherein said first conductive protrusions extend away from said metal layer and are exposed above a top surface of said dielectric layer; and
selectively removing portions of said metal layer from the bottom surface of said metal layer to form second conductive protrusions that extend away from said first conductive protrusions, wherein at least some of said first and second conductive protrusions are electrically interconnected with one another.