| US 7,545,667 B2 | ||
| Programmable via structure for three dimensional integration technology | ||
| Bruce G. Elmegreen, Golden Bridge, N.Y. (US); Lia Krusin-Elbaum, Dobbs Ferry, N.Y. (US); Chung Hon Lam, Peekskill, N.Y. (US); Dennis M. Newns, Yorktown Heights, N.Y. (US); Matthew R. Wordeman, Kula, Hi. (US); and Albert M. Young, Fishkill, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Mar. 30, 2006, as Appl. No. 11/393,270. | ||
| Prior Publication US 2007/0235708 A1, Oct. 11, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—148 [365/163; 257/2; 257/3] | 3 Claims |
| 1. A method for programming a programmable link structure of a three dimensional integration (3DI) semiconductor devices,
comprising:
passing a current through a heating device, said heating device proximate a via filled at least in part with a phase change
material (PCM), said via thereby defining a programmable link between an input connection located at one end thereof and an
output connection located at another end thereof;
wherein said input connection of said programmable link is formed on a first metal level, input and output terminals for said
heating device are located on a second metal level, and said output connection of said programmable link is formed on a third
metal level;
wherein said via filled at least in part with said PCM is disposed between said input connection of said programmable link
and a top side of said heating device, and wherein another via is disposed between a bottom surface of said heating device
and said output connection of said programmable link, with said another via being disposed directly beneath one of the input
and output terminals for said heating device, said another via filled with a metal material; and
wherein said heating device is configured to switch the conductivity of a transformable portion of said PCM between a lower
resistance crystalline state and a higher resistance amorphous state.
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