| US 7,544,940 B2 | ||
| Semiconductor device including vanadium oxide sensor element with restricted current density | ||
| Hiroaki Ohkubo, Kanagawa (Japan); and Yasutaka Nakashiba, Kanagawa (Japan) | ||
| Assigned to NEC Electronics Corporation, Kawasaki-Shi (Japan) | ||
| Filed on May 24, 2005, as Appl. No. 11/135,468. | ||
| Claims priority of application No. 2004-153456 (JP), filed on May 24, 2004. | ||
| Prior Publication US 2005/0269512 A1, Dec. 08, 2005 | ||
| Int. Cl. G01J 5/00 (2006.01); G01J 5/12 (2006.01); H01L 31/058 (2006.01) | ||
| U.S. Cl. 250—338.1 [257/467; 257/468; 257/536; 257/537; 250/338.4; 250/339.04] | 9 Claims |
| 1. A semiconductor device comprising:
a semiconductor substrate;
at least one sensor element made of vanadium oxide formed over said semiconductor substrate, said sensor element being designed
so that a density of a current flowing through said sensor element is between 0 to 100 μA/μm2,
a multi-layer interconnection layer formed on said semiconductor substrate;
a logic circuit formed in said semiconductor substrate and said multi-layer interconnection layer; and
an insulating layer formed on said multi-layer interconnection layer in contact with an uppermost conductive layer thereof,
said sensor element being formed on said insulating layer, at least a part of said sensor element being in contact with said
insulating layer,
wherein said sensor element is configured so that a resistance of said sensor element is changed in accordance with an ambient
temperature of said device, and
wherein said sensor element is configured so that a resistance of said sensor element is changed in accordance with heat generated
from said device.
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