| US 7,544,598 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Hiroshi Ohara, Shiojiri (Japan) | ||
| Assigned to Seiko Epson Corporation, Tokyo (Japan) | ||
| Filed on Jul. 05, 2006, as Appl. No. 11/480,376. | ||
| Claims priority of application No. 2005-208667 (JP), filed on Jul. 19, 2005. | ||
| Prior Publication US 2007/0018306 A1, Jan. 25, 2007 | ||
| Int. Cl. H01L 21/28 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—612 [438/666; 257/737; 257/E23.021] | 11 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate which includes a plurality of electrodes and an insulating film formed on a first side
of the semiconductor substrate, a depression formed on a first surface of the semiconductor substrate, the first surface of
the semiconductor substrate being positioned on the first side of the semiconductor substrate;
forming a resin protrusion on the semiconductor substrate so that a first part of the resin protrusion is positioned in the
depression and a second part of the resin protrusion is positioned on the first surface of the semiconductor substrate; and
forming an interconnect on the second part of the resin protrusion, the interconnect being electrically connected to at least
one of the electrodes.
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