US 7,544,546 B2
Formation of carbon and semiconductor nanomaterials using molecular assemblies
Ali Afzali-Ardakani, Ossining, N.Y. (US); Cherie R. Kagan, Ossining, N.Y. (US); and Laura L. Kosbar, Mohegan Lake, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on May 15, 2006, as Appl. No. 11/433,586.
Prior Publication US 2007/0264764 A1, Nov. 15, 2007
Int. Cl. B82B 1/00 (2006.01); B82B 3/00 (2006.01)
U.S. Cl. 438—142  [977/890; 977/932; 977/936; 977/938; 977/840; 438/149; 438/151; 438/154; 438/161; 438/197; 257/E51.04] 1 Claim
OG exemplary drawing
 
1. A method of forming carbon nanomaterials or semiconductor nanomaterials consisting of:
providing a substrate and attaching a molecular precursor to the substrate, wherein the molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species;
complexing the binding group for attachment of metal-containing species, where the metal-containing species is a metal-oxide nanoparticle to form a metallized molecular precursor; and
heating the metallized molecular precursor to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form
wherein the molecular precursor further consists of a body portion disposed between the surface binding group and the binding group for attachment of metal-containing species, wherein the body portion provides a sufficient intermolecular interaction with neighboring attached molecular precursors to form a molecular monolayer,
wherein the surface binding group is a thiol and the substrate is gold and
wherein the metal oxide nanoparticle contains iron.