US 7,544,389 B2
Precursor for film formation and method for forming ruthenium-containing film
Christian Dussarrat, Tsukuba (Japan); Kazutaka Yanagita, Tsukuba (Japan); and Julien Gatineau, Tsukuba (Japan)
Assigned to L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, Paris (France)
Appl. No. 11/576,209
PCT Filed Sep. 26, 2005, PCT No. PCT/IB2005/002833
§ 371(c)(1), (2), (4) Date Oct. 03, 2007,
PCT Pub. No. WO2006/035281, PCT Pub. Date Apr. 06, 2006.
Claims priority of application No. 2004-281468 (JP), filed on Sep. 28, 2004.
Prior Publication US 2008/0038465 A1, Feb. 14, 2008
Int. Cl. C23C 16/00 (2006.01)
U.S. Cl. 427—248.1  [427/126.5] 17 Claims
OG exemplary drawing
 
1. A method for forming a ruthenium-containing film, comprising the steps of depositing a ruthenium-containing film on a substrate by introducing at least a precursor for film formation into a reaction chamber that contains at least one substrate, wherein said precursor is introduced in gaseous form and wherein the precursor comprises ruthenium tetroxide dissolved in non-flammable fluorinated solvent, having the general formula CxHyFzOtNu wherein:
a) 2x+2≤y+z;
b) 2≤x≤15;
c) z>y; and
d) t+u≧1,
x, y, and z, being positive integers equal to or greater than 1, t and u being integers greater than or equal zero, and introducing a gaseous reducing agent into the reaction chamber and thereby depositing ruthenium on at least one substrate by reacting said gaseous precursors with the gaseous reducing agent.