| US 7,544,273 B2 | ||
| Deposition methods and stacked film formed thereby | ||
| Takahiro Taneda, Osaka (Japan); Koso Fujino, Osaka (Japan); and Kazuya Ohmatsu, Osaka (Japan) | ||
| Assigned to Sumitomo Electric Industries, Ltd., Osaka (Japan); and International Superconductivity Technology, Tokyo (Japan) | ||
| Appl. No. 10/467,337 PCT Filed Dec. 10, 2001, PCT No. PCT/JP01/10814 § 371(c)(1), (2), (4) Date Aug. 21, 2003, PCT Pub. No. WO02/072909, PCT Pub. Date Sep. 19, 2002. |
||
| Claims priority of application No. 2001-067274 (JP), filed on Mar. 09, 2001. | ||
| Prior Publication US 2004/0067386 A1, Apr. 08, 2004 | ||
| Int. Cl. C23C 14/00 (2006.01) | ||
| U.S. Cl. 204—192.1 [204/192.24; 427/62] | 37 Claims |
| 1. A deposition method of forming a film by scattering a deposition material from a surface of a target material and growing
the scattered deposition material on a surface of a substrate, comprising the steps of:
orienting said substrate in a first state in which the surface of said substrate forms a prescribed angle with respect to
the surface of said target material, where a shortest distance between one end of said substrate and said target material
is smaller than a shortest distance between the other end of said substrate and said target material;
forming a first film on said substrate by moving said substrate along a linear path through a region of scattered deposition
material while maintaining the orientation of the substrate in said first state to produce a first film thickness that is
larger at said one end than the first film thickness at the other end;
orienting said substrate in a second state in which the surface of said substrate forms said prescribed angle with respect
to the surface of said target material, where a shortest distance between said one end of said substrate and said target material
is larger than a shortest distance between said the other end of said substrate and said target material;
forming a second film on said first film by moving said substrate along a linear path through a region of scattered deposition
material while maintaining the orientation of the substrate in said second state to produce a second film thickness that is
larger at said other end than the second film thickness at the one end;
forming at least one superconducting layer on said second film; and
wherein said step of forming at least one superconducting layer includes forming at least one superconducting layer by any
of ion beam sputtering, sputtering, thermal co-evaporation, metal organic decomposition, molecular beam epitaxy, metal organic
chemical vapor deposition, electron beam evaporation, and laser ablation.
|