| US 7,544,265 B2 | ||
| Method of fabricating a release substrate | ||
| Olivier Rayssac, Grenoble (France); Pierre Rayssac, legal representative, and Gisele Rayssac, legal representative; and Takeshi Akatsu, St. Nazaire les Eymes (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Jul. 05, 2006, as Appl. No. 11/481,696. | ||
| Application 11/481696 is a continuation of application No. PCT/IB2005/000347, filed on Jan. 24, 2005. | ||
| Claims priority of application No. 04 00694 (FR), filed on Jan. 26, 2004. | ||
| Prior Publication US 2007/0077729 A1, Apr. 05, 2007 | ||
| Int. Cl. B44C 1/17 (2006.01); B29C 37/02 (2006.01); B29C 35/02 (2006.01); B32B 37/06 (2006.01); B32B 37/02 (2006.01); B32B 38/18 (2006.01); H01L 21/322 (2006.01); H01L 21/324 (2006.01); H01L 21/304 (2006.01); B44C 1/22 (2006.01); B32B 37/16 (2006.01); B32B 38/08 (2006.01); B32B 38/10 (2006.01); H01L 21/42 (2006.01) | ||
| U.S. Cl. 156—239 [156/235; 156/272.2; 117/915; 438/33; 438/455; 438/473; 438/474; 438/475; 438/476] | 20 Claims |
| 1. A method of fabricating a release substrate of semiconductor materials, which comprises forming a reversible connection
between two substrate release layers by providing a connecting layer of a first material, and providing a concentrated zone
of nanoparticles of a second material in the connecting layer as a first substrate release layer to facilitate release of
the substrate release layers, with the connecting layer having a bonding energy that is substantially constant even when the
release substrate is exposed to heat treatment, wherein the connecting layer is formed by:
providing a first elemental layer of the first material adjacent the first substrate release layer;
forming an enriched layer by providing a second elemental layer of the second material or a precursor for the second material
on the surface of the first elemental layer;
further providing a third elemental layer of the first material on the surface of the enriched layer; and
heat treating the enriched layer to cause segregation of nanoparticles of the second material thus forming a second release
layer.
|