| US 7,543,104 B2 | ||
| Non-volatile semiconductor device for use in memory card and memory system | ||
| Kazuya Kawamoto, Sagamihara (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Apr. 13, 2006, as Appl. No. 11/402,977. | ||
| Claims priority of application No. 2005-118592 (JP), filed on Apr. 15, 2005. | ||
| Prior Publication US 2006/0239089 A1, Oct. 26, 2006 | ||
| Int. Cl. G06F 13/10 (2006.01) | ||
| U.S. Cl. 711—103 [711/154] | 16 Claims |
| 1. A semiconductor memory device comprising:
a block having a plurality of memory cells arranged in rows and columns thereof, and including a plurality of pages, said
plurality of pages are respectively arranged in rows; and
a reading portion which reads data in said plurality of pages in the block as a logical product in each column direction.
wherein the block has a flag in each of the pages, and
the flag is set to a different column for each page.
|