| US 7,542,103 B2 | ||
| Electro-optical device | ||
| Hongyong Zhang, Kanagawa (Japan); Naoaki Yamaguchi, Kanagawa (Japan); and Yasuhiko Takemura, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory, Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Apr. 16, 2007, as Appl. No. 11/735,656. | ||
| Application 11/073752 is a division of application No. 10/267526, filed on Oct. 08, 2002, granted, now 6,914,260, filed on Jul. 05, 2005. | ||
| Application 11/735656 is a continuation of application No. 11/073752, filed on Mar. 08, 2005, granted, now 7,206,053, filed on Apr. 17, 2007. | ||
| Application 10/267526 is a continuation of application No. 09/850886, filed on May 07, 2001, granted, now 6,475,837, filed on Nov. 05, 2002. | ||
| Application 09/850886 is a continuation of application No. 09/360841, filed on Jul. 22, 1999, granted, now 6,246,453, filed on Jun. 12, 2001. | ||
| Application 09/360841 is a continuation of application No. 08/881182, filed on Jun. 24, 1997, granted, now 5,982,460, filed on Nov. 09, 1999. | ||
| Claims priority of application No. 8-185638 (JP), filed on Jun. 25, 1996. | ||
| Prior Publication US 2007/0182873 A1, Aug. 09, 2007 | ||
| Int. Cl. G02F 1/136 (2006.01) | ||
| U.S. Cl. 349—46 | 16 Claims |
| 1. An active matrix display device comprising:
a thin film transistor formed over a substrate;
a gate bus line, wherein a first portion of the gate bus line is a gate electrode of the thin film transistor;
a source bus line crossing at a second portion of the gate bus line;
a common electrode comprising a transparent conductive film, and formed over the thin film transistor; and
a pixel electrode partially overlapped with the common electrode,
wherein the gate bus line and the source bus line are overlapped with the common electode,
wherein a first width of the gate bus line at the first portion is narrower than a second width of the gate bus line at the
second portion, and
wherein the first width of the gate bus line is measured along a line parallel to a line along which the second width of the
gate bus line is measured.
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