| US 7,542,086 B2 | ||
| Solid-state image-sensing device | ||
| Yoshio Hagihara, Amagasaki (Japan) | ||
| Assigned to Minolta Co., Ltd., Osaka (Japan) | ||
| Filed on Jan. 27, 2006, as Appl. No. 11/341,313. | ||
| Application 11/341313 is a division of application No. 09/769065, filed on Jan. 25, 2001, granted, now 7,030,921. | ||
| Claims priority of application No. 2000-28879 (JP), filed on Feb. 01, 2000; application No. 2000-28946 (JP), filed on Feb. 01, 2000; and application No. 2000-56029 (JP), filed on Feb. 28, 2000. | ||
| Prior Publication US 2006/0119723 A1, Jun. 08, 2006 | ||
| Int. Cl. H04N 3/14 (2006.01); H04N 5/335 (2006.01) | ||
| U.S. Cl. 348—302 [250/208.1] | 8 Claims |
| 1. A solid-state image-sensing device comprising:
a plurality of pixels each comprising:
a photodiode;
a first MOS transistor having a first electrode connected to one electrode of the photodiode;
a second MOS transistor having a first electrode and a gate electrode connected to a second electrode of the first MOS transistor;
a third MOS transistor having a gate electrode connected to the first and gate electrodes of the second MOS transistor; and
a fourth MOS transistor having a first electrode connected to the first and gate electrodes of the second MOS transistor and
receiving at a second electrode a direct-current voltage;
wherein, when an image sensing operation is performed in each pixel, the first MOS transistor is turned on and the fourth
MOS transistor is turned off so that the second MOS transistor operates in a subthreshold region below a subthreshold level
thereof, and
wherein, when a reset operation is performed in each pixel, the first MOS transistor is turned off and the fourth MOS transistor
is turned on so that the second MOS transistor permits a current higher than in an image sensing operation to flow therethrough.
|