| US 7,541,865 B2 | ||
| EER high frequency amplifier | ||
| Kazuhiro Uchiyama, Shizuoka (Japan); and Shinji Ohkawa, Kanagawa (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Appl. No. 11/575,546 PCT Filed Sep. 16, 2005, PCT No. PCT/JP2005/017174 § 371(c)(1), (2), (4) Date Mar. 19, 2007, PCT Pub. No. WO2006/033303, PCT Pub. Date Mar. 30, 2006. |
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| Claims priority of application No. 2004-273890 (JP), filed on Sep. 21, 2004. | ||
| Prior Publication US 2007/0247232 A1, Oct. 25, 2007 | ||
| Int. Cl. H03F 3/38 (2006.01) | ||
| U.S. Cl. 330—10 [330/126; 330/298; 455/127.1] | 5 Claims |
| 1. An EER modulation amplifier that outputs a desired modulated and amplified signal from a high frequency amplification section
by separating a phase signal and an amplitude signal from an inputted high frequency signal, amplifying the signals individually,
setting the amplified phase signal as a gate voltage of the high frequency amplification section, and controlling a drain
voltage of the high frequency amplification section based on the amplified amplitude signal, the EER modulation amplifier
comprising:
a drain voltage generating section that generates a drain voltage according to the amplitude signal and supplies the drain
voltage to a drain terminal of the high frequency amplification section;
a drain voltage determining section that determines a magnitude of the drain voltage in comparison to a first reference voltage
set in advance; and
a gate voltage control section that holds an initially set first gate voltage when the drain voltage is lower than the first
reference voltage, and makes the gate voltage of the high frequency amplification section variable according to the drain
voltage when the drain voltage is higher than the first reference voltage.
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