| US 7,541,804 B2 | ||
| Magnetic tunnel junction sensor | ||
| Young Sir Chung, Chandler, Ariz. (US); Robert W. Baird, Gilbert, Ariz. (US); and Bradley N. Engel, Chandler, Ariz. (US) | ||
| Assigned to EverSpin Technologies, Inc., Chandler, Ariz. (US) | ||
| Filed on Jul. 29, 2005, as Appl. No. 11/192,569. | ||
| Prior Publication US 2007/0025027 A1, Feb. 01, 2007 | ||
| Int. Cl. G01R 33/02 (2006.01) | ||
| U.S. Cl. 324—244 | 16 Claims |
| 1. A magnetic tunnel junction (MTJ) sensor, comprising:
an MTJ including a first conductor overlying the MTJ and adapted to carry current and having a first orientation with respect
to the MTJ and a second conductor underlying the MTJ and adapted to carry current and having a second orientation substantially
orthogonal to the first orientation; and
a magnetic field source (MFS) moveably coupled to the MTJ and providing a magnetic field at the MTJ that varies in response
to movement of the MFS.
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