US 7,541,680 B2
Semiconductor device package
Heung-kyu Kwon, Seongnam-si (Korea, Republic of); Se-nyun Kim, Cheonan-si (Korea, Republic of); Tae-hun Kim, Asan-si (Korea, Republic of); Jeong-o Ha, Asan-si (Korea, Republic of); Hak-kyoon Byun, Asan-si (Korea, Republic of); and Sung-yong Park, Seongnam-si (Korea, Republic of)
Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of)
Filed on Aug. 25, 2006, as Appl. No. 11/509,641.
Claims priority of application No. 10-2005-0078863 (KR), filed on Aug. 26, 2005.
Prior Publication US 2007/0045828 A1, Mar. 01, 2007
Int. Cl. H01L 23/12 (2006.01); H01L 23/48 (2006.01)
U.S. Cl. 257—777  [257/723; 257/685; 257/686; 257/E25.006; 257/E25.013; 257/E25.027; 257/E23.085] 9 Claims
OG exemplary drawing
 
1. A semiconductor device package comprising:
a substrate having a surface and a substrate pad thereon;
a memory chip stacked on the substrate and having a memory chip pad connected to a common pin receiving a common memory chip signal;
an interposer chip stacked between the substrate and the memory chip having an interposer pad connected to the memory chip pad; and
a secondary chip stacked between the substrate and the interposer chip and having
a common pin;
a bypass circuit having switching circuits;
a first analog logic pin connected between the substrate pad and the bypass circuit; and
a second analog-logic pin connected between the bypass circuit and the interposer pad,
wherein during a direct access test of the secondary chip, the switching circuits of the bypass circuit are configured to disconnect the first analog-logic pin from the second analog-logic pin, and connect the first analog-logic pin to the common pin; and
during a direct access test of the memory chip, the switching circuit of the bypass circuit are configured to disconnect the common pin from the first analog-logic pin and connect the first and second analog-logic pins.