| US 7,541,660 B2 | ||
| Power semiconductor device | ||
| Hans-Joachim Schulze, Ottobrunn (Germany); Frank Hille, München (Germany); and Thomas Raker, Ottobrunn (Germany) | ||
| Assigned to Infineon Technologies Austria AG, Villach (Austria) | ||
| Filed on Apr. 20, 2006, as Appl. No. 11/379,492. | ||
| Prior Publication US 2007/0246791 A1, Oct. 25, 2007 | ||
| Int. Cl. H01L 23/58 (2006.01) | ||
| U.S. Cl. 257—492 [257/493; 257/495] | 34 Claims |
| 1. A semiconductor device, comprising:
a doped semiconductor substrate;
an upper layer of semiconductor material of a first conductivity type disposed on said semiconductor substrate, said upper
layer having an upper surface and including an active region that comprises a well region of a second, opposite conductivity
type and an edge termination zone that comprises
a junction termination extension (JTE) region of the second conductivity type, said JTE region comprising portions extending
away from said well region;
a number of field limiting rings of the second conductivity type disposed at the upper surface in the JTE region; and
wherein a dopant density of the field limiting rings increases from a maximum value of the innermost field limiting ring closest
to the well region to a minimum value of the furthermost field limiting ring.
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