| US 7,541,659 B1 | ||
| Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same | ||
| Eun Soo Nam, Daejeon (Korea, Republic of); Seon Eui Hong, Daejeon (Korea, Republic of); Myoung Sook Oh, Daejeon (Korea, Republic of); Yong Won Kim, Daejeon (Korea, Republic of); Ho Young Kim, Daejeon (Korea, Republic of); and Bo Woo Kim, Daejeon (Korea, Republic of) | ||
| Assigned to Electronics and Telecommunications Research Institute, Daejeon (Korea, Republic of) | ||
| Filed on Dec. 07, 2006, as Appl. No. 11/635,170. | ||
| Claims priority of application No. 10-2005-0121973 (KR), filed on Dec. 12, 2005. | ||
| Int. Cl. H01L 31/06 (2006.01) | ||
| U.S. Cl. 257—461 [257/292; 257/458; 257/463; 257/E27.132; 257/E27.133] | 12 Claims |
| 1. A photo-detector comprising:
a semi-insulating compound semiconductor substrate;
a multi-layer compound semiconductor layer on the semi-insulating compound semiconductor substrate;
a number of p-n junction diodes arranged in a regular order in a selected region of the compound semiconductor layer, wherein
each p-n junction diode comprises a p+ diffusion region, a depletion layer and an n doped layer;
a trench isolation region in the multi-layer compound semiconductor layer individually isolating vertically the p-n junction
diodes such that only the n doped layer of each p-n junction diode directly contacts the trench isolation region; and
a planarized isolation region on a portion of the compound semiconductor layer and on the trench isolation region.
|