a plurality of photodiode parts, each of which converts incident light into a signal charge;

a plurality of vertical charge transfer parts, each of which reads out the signal charge from the photodiode part and transfers the signal charge in a vertical direction; and

a plurality of shade films that have conductivity and respectively shade the vertical charge transfer part from the incident light,

the solid-state imaging device supplying a transfer pulse to the vertical charge transfer part via the shade film,

wherein the plurality of the photodiode parts are provided on a semiconductor substrate and are arranged in matrix,

each of the plurality of the vertical charge transfer parts comprises a transfer channel that is provided along a vertical column of the plurality of the photodiode parts in the semiconductor substrate, and a plurality of transfer electrodes that are provided on the transfer channel so as to cross the transfer channel,

each of the plurality of the shade films is formed above each of the corresponding vertical charge transfer parts via an insulation layer that insulates the shade film from the transfer electrodes,

the insulation layer has a thick part in a part of the insulation layer where the shade film is overlapped on a side of the photodiode part that is a subject to be read out by the vertical charge transfer part shaded by the shade film, and

a lens element that is convex downwards is provided above the plurality of the photodiode parts, for each of the plurality of the photodiode parts or each of the vertical columns of the plurality of the photodiode parts.