| US 7,541,621 B2 | ||
| Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device | ||
| Takahisa Kurahashi, Kashiba (Japan); Tetsurou Murakami, Tenri (Japan); Shouichi Ooyama, Kyoto-fu (Japan); and Osamu Yamamoto, Nara (Japan) | ||
| Assigned to Sharp Kabushiki Kaisha, Osaka (Japan) | ||
| Filed on Aug. 22, 2005, as Appl. No. 11/207,794. | ||
| Claims priority of application No. 2004-245492 (JP), filed on Aug. 25, 2004. | ||
| Prior Publication US 2006/0043392 A1, Mar. 02, 2006 | ||
| Int. Cl. H01L 33/00 (2006.01) | ||
| U.S. Cl. 257—94 [257/79; 257/E33.006] | 7 Claims |
| 1. A semiconductor light emitting device comprising:
a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer;
a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to
the second semiconductor layer which are formed in this order; a first electrode to which a probe is connectable on a surface
of the first semiconductor layer opposite to the emission layer, wherein said first electrode is in non-ohmic contact with
the first semiconductor layer; and a second electrode which is positioned around the first electrode on a surface of the first
semiconductor layer, and which is electrically connected to the first electrode and is in ohmic contact with the first semiconductor
layer; and
a current narrowing portion formed on the transparent substrate bounding on the second semiconductor layer; wherein
the transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission
layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface and the current narrowing
portion defines a light emitting region in the emission layer at a position almost identical to the first electrode in plan
view.
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