| US 7,541,608 B2 | ||
| Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells | ||
| Toshijaru Furukawa, Essex Junction, Vt. (US); Mark C. Hakey, Fairfax, Vt. (US); Steven J. Holmes, Guilderland, N.Y. (US); David V. Horak, Essex Junction, Vt. (US); Charles W. Koburger, Delmar, N.Y. (US); Chung H. Lam, Peekskill, N.Y. (US); and Gerhard I. Meijer, Zurich (Switzerland) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Feb. 14, 2008, as Appl. No. 12/30,927. | ||
| Application 12/030927 is a continuation of application No. 11/748579, filed on May 15, 2007, granted, now 7,378,678. | ||
| Prior Publication US 2008/0131995 A1, Jun. 05, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—2 [257/3; 257/4; 257/E45.003; 438/104; 438/900] | 6 Claims |
| 1. A method of forming a memory device, said method comprising:
simultaneously forming a series of single memory cells, wherein forming of each of said single memory cells in said series
comprises:
forming two parallel holes in an insulating layer;
forming a memory element with a first top electrical contact in one of said two parallel holes by filling said one of said
two parallel holes with a first conductive layer, a transition metal oxide layer on said first conductive layer, and a second
conductive layer on said transition metal oxide layer,
forming a conductive section with a second top electrical contact in another of said two parallel holes by filling said other
of said two parallel holes with a conductive material; and
electrically connecting said memory element and said conductive section; and
simultaneously conditioning all of said transition metal oxide layers of said memory elements of said single memory cells
in said series, wherein said conditioning causes said transition metal oxide layers to exhibit a bi-stable electrical resistance,
wherein said conditioning applies an electrical field of approximately 0.1 V/nm for a duration between 1 to 60 minutes to
convert the transition metal oxide layer to exhibit a bi-stable electrical resistance with a first state of approximately
100 kilo-ohm, and a second state of approximately 1 kilo-ohm.
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