| US 7,541,296 B2 | ||
| Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor device | ||
| Tamotsu Owada, Kawasaki (Japan); Hirofumi Watatani, Kawasaki (Japan); Yoshihiro Nakata, Kawasaki (Japan); Shirou Ozaki, Kawasaki (Japan); and Shun-ichi Fukuyama, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on Jul. 01, 2005, as Appl. No. 11/171,318. | ||
| Claims priority of application No. 2005-032446 (JP), filed on Feb. 09, 2005. | ||
| Prior Publication US 2006/0178017 A1, Aug. 10, 2006 | ||
| Int. Cl. H01L 21/469 (2006.01); H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—778 [257/E21.271; 257/E21.576; 438/783] | 17 Claims |
| 1. A method for forming an insulating film, comprising:
coating a solution containing an insulating material to form a coating film containing the insulating material;
heating the coating film to remove a solvent therefrom;
forming a barrier film on the coating film after removal of the solvent; and
irradiating hydrogen plasma onto the coating film through the barrier film.
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