| US 7,541,245 B2 | ||
| Semiconductor device with silicon-film fins and method of manufacturing the same | ||
| Hirohisa Kawasaki, Yokohama (Japan); and Kazunari Ishimaru, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Dec. 12, 2006, as Appl. No. 11/637,734. | ||
| Application 11/637734 is a division of application No. 10/835122, filed on Apr. 28, 2004, granted, now 7,164,175. | ||
| Claims priority of application No. 2003-204386 (JP), filed on Jul. 31, 2003; and application No. 2004-111095 (JP), filed on Apr. 05, 2004. | ||
| Prior Publication US 2007/0090468 A1, Apr. 26, 2007 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—284 [438/286] | 15 Claims |
| 1. A semiconductor device manufacturing method comprising:
depositing a first insulating film on a substrate, with a semiconductor layer interposed;
forming an opening having a rectangular plane surface by selectively etching the first insulating film and the semiconductor
layer;
forming a pull-back section in accordance with a width of a first and second semiconductor films to be formed by selectively
etching the first insulating film;
forming an insulating film layer having a T-shaped cross section by filling the opening and the pull-back section with a second
insulating film;
forming the first and second semiconductor films having a thickness thinner than a gate length on a first and second side
surfaces of the insulating film by etching the semiconductor layer with the insulating film layer as a mask after removing
all of the first insulating film; and
forming a gate electrode so as to interpose the insulating film layer and the first and second semiconductor films in between
from upper side.
|