| US 7,541,233 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Yoshio Ozawa, Yokohama (Japan); Shigehiko Saida, Yokkaichi (Japan); Yuji Takeuchi, Yokohama (Japan); and Masanobu Saito, Chiba (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 15, 2008, as Appl. No. 12/7,751. | ||
| Application 11/338654 is a division of application No. 10/812987, filed on Mar. 31, 2004, granted, now 7,081,386. | ||
| Application 12/007751 is a continuation of application No. 11/338654, filed on Jan. 25, 2006. | ||
| Claims priority of application No. 2003-149335 (JP), filed on May 27, 2003. | ||
| Prior Publication US 2008/0119021 A1, May 22, 2008 | ||
| Int. Cl. H01L 21/336 (2006.01); H01L 21/8234 (2006.01) | ||
| U.S. Cl. 438—197 [438/257; 438/259; 438/264; 438/294; 257/E21.209; 257/E21.18; 257/E21.21] | 13 Claims |
| 1. A method of manufacturing a semiconductor device, the device comprising: a semiconductor substrate; an isolation region
provided on a surface of the semiconductor substrate and including an isolation trench; and a non-volatile memory cell provided
on the semiconductor substrate, the non-volatile memory cell comprising: a tunnel insulating film including a portion whose
thickness increases gradually toward the isolation region; a floating gate electrode provided on the tunnel insulating film;
a control gate electrode above the floating gate electrode; and an interelectrode insulating film provided between the control
gate electrode and the floating gate electrode,
the method comprising:
forming an insulating film to be processed into the tunnel insulating film on the semiconductor substrate;
forming a semiconductor film to be processed into the floating gate electrode on the insulating film;
forming the isolation trench by etching the semiconductor film, the insulating film, and the semiconductor substrate; and
annealing the floating gate electrode, the tunnel insulating film, and the semiconductor substrate in an oxidizing atmosphere.
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