| US 7,541,230 B2 | ||
| Method and apparatus for crystallizing semiconductor with laser beams | ||
| Nobuo Sasaki, Kawasaki (Japan); and Koichi Ohki, Mitaka (Japan) | ||
| Assigned to Sharp Kabushiki Kaisha, Osaka (Japan) | ||
| Filed on Jul. 10, 2006, as Appl. No. 11/483,897. | ||
| Application 11/483897 is a division of application No. 11/147556, filed on Jun. 08, 2005, granted, now 7,115,457. | ||
| Application 11/147556 is a division of application No. 10/436673, filed on May 13, 2003, granted, now 6,977,775. | ||
| Claims priority of application No. 2002-143032 (JP), filed on May 17, 2002; application No. 2002-143070 (JP), filed on May 17, 2002; and application No. 2002-143097 (JP), filed on May 17, 2002. | ||
| Prior Publication US 2006/0252189 A1, Nov. 09, 2006 | ||
| Int. Cl. H01L 27/14 (2006.01) | ||
| U.S. Cl. 438—166 [438/7; 438/487] | 6 Claims |
| 1. A method of crystallizing a semiconductor, comprising the steps of:
dividing a laser beam emitted by a laser source into a plurality of sub-beams; and
irradiating the sub-beams onto an amorphous semiconductor on a substrate to crystallize the semiconductor;
wherein laser beams emitted by the laser source inducing the sub-beams are simultaneously and selectively irradiated into
a single surface of the semiconductor to form separate beam spots,
wherein the sub-beams are irradiated to scan in a first direction in a surface of the substrate;
wherein the sub-beams are positioned in the surface of the substrate and in a second direction perpendicular to the first
direction, and
wherein the sub-beams reciprocally scan in the first direction, and a scan position is shifted in the second direction for
each scan,
wherein the scan position is shifted in the second direction, by a smaller distance than intervals between the sub-beams positioned
in the second direction.
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