| US 7,541,228 B2 | ||
| Semiconductor device, method of manufacturing the same, and method of designing the same | ||
| Kiyoshi Kato, Sagamihara (Japan); Toshihiko Saito, Atsugi (Japan); Atsuo Isobe, Atsugi (Japan); Toru Takayama, Atsugi (Japan); Junya Maruyama, Ebina (Japan); Yuugo Goto, Atsugi (Japan); and Yumiko Ohno, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Jan. 04, 2008, as Appl. No. 12/3,983. | ||
| Application 12/003983 is a division of application No. 11/064820, filed on Feb. 25, 2005, granted, now 7,344,925. | ||
| Application 11/064820 is a division of application No. 10/395310, filed on Mar. 25, 2003, granted, now 6,875,998. | ||
| Claims priority of application No. 2002-085807 (JP), filed on Mar. 26, 2002. | ||
| Prior Publication US 2008/0138943 A1, Jun. 12, 2008 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—149 [438/197; 438/166; 438/689] | 18 Claims |
| 1. A method of designing a semiconductor device with a plurality of cells, the cells each including a plurality of TFTs that
have the same channel length direction, the cells being arranged to form columns along the channel length direction,
wherein the plural TFTs of the cells each have an island-like semiconductor film and the island-like semiconductor film is
placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel
length direction matching the longitudinal direction of the depressive portion, and
wherein every cell in the same column out of the plural columns has a width in the direction perpendicular to the channel
length direction that is smaller than a width of a laser light for crystallizing the island-like semiconductor film of each
of the plural TFTs in the direction perpendicular to the channel length direction.
|