US 7,541,211 B2
Photoelectric conversion device, its manufacturing method, and image pickup device
Seiichi Tamura, Yokohama (Japan); Hiroshi Yuzurihara, Atsugi (Japan); Shigeru Nishimura, Ebina (Japan); Ryuichi Mishima, Machida (Japan); and Yasushi Nakata, Yokohama (Japan)
Assigned to Canon Kabushiki Kaisha, Tokyo (Japan)
Filed on Dec. 28, 2005, as Appl. No. 11/318,930.
Claims priority of application No. 2004-379954 (JP), filed on Dec. 28, 2004.
Prior Publication US 2006/0141655 A1, Jun. 29, 2006
Int. Cl. H01L 21/00 (2006.01)
U.S. Cl. 438—48 5 Claims
OG exemplary drawing
 
1. A manufacturing method of a photoelectric conversion device including a silicon substrate, a plurality of photoelectric conversion elements each including a charge storage region on a principal plane of the silicon substrate, and a plurality of transfer MOS transistors for transferring charge from the charge storage regions, wherein the principal plane has an off-angle orientation forming an angle θ with at least two planes arranged in opposition to each other and perpendicular to a reference (1 0 0) plane within a range of 3.5°≤θ≤4.5°, and wherein the at least two planes form a two-plane direction, the method comprising:
forming the charge storage regions by injecting ions at an ion injecting direction into the plurality of photoelectric conversion elements, the ion injecting direction being a same direction for respective ones of the plurality of photoelectric conversion elements, such that the ion injecting direction forms an angle φ relative to a direction perpendicular to the principal plane within a range of 0°<φ≤45°, and such that a direction of a projection of the ion injecting direction to the principal plane forms an angle α with the two plane direction within a range of 0°<α<90°,
wherein for each charge storage region:
a part of the charge storage region is arranged under a part of a gate electrode of a corresponding transfer MOS transistor, and
a direction of the part of the charge storage region arranged under the gate electrode as seen from a corresponding photoelectric conversion element forms the angle α with the two plane direction within a range of 40°≤α≤50°.