| US 7,541,204 B2 | ||
| Method of manufacturing an optical semiconductor element | ||
| Daiki Iino, Kanagawa-ken (Japan); Naoya Hayamizu, Kanagawa-ken (Japan); and Tadashi Shimmura, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 05, 2006, as Appl. No. 11/470,075. | ||
| Claims priority of application No. 2005-256072 (JP), filed on Sep. 05, 2005. | ||
| Prior Publication US 2007/0099324 A1, May 03, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—22 [438/40] | 20 Claims |
| 1. A method of manufacturing an optical semiconductor element comprising:
forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being
formed on a substrate;
forming a protection film on an upper face and on both side faces of the protruding body; and
forming a ridge including the protruding body by etching the InGaAlP layer around the protruding body using a solution containing
hydrofluoric acid.
|