| US 7,541,136 B2 | ||
| Mask, manufacturing method for mask, and manufacturing method for semiconductor device | ||
| Kyoko Izuha, Yokohama (Japan); Hideki Kanai, Yokohama (Japan); Soichi Inoue, Yokohama (Japan); Shingo Kanamitsu, Kawasaki (Japan); and Shinichi Ito, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 22, 2006, as Appl. No. 11/472,452. | ||
| Application 11/472452 is a division of application No. 10/668245, filed on Sep. 24, 2003, granted, now 7,094,504. | ||
| Claims priority of application No. 2002-279742 (JP), filed on Sep. 25, 2002. | ||
| Prior Publication US 2006/0240341 A1, Oct. 26, 2006 | ||
| Int. Cl. G03C 5/00 (2006.01) | ||
| U.S. Cl. 430—311 | 15 Claims |
| 1. A method of manufacturing a semiconductor device comprising transferring a pattern provided on a mask to a substrate using
an exposure apparatus, the mask comprising:
a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase
shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding
area; and
a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate
and a second opening area surrounded by the second surrounding area,
wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured
to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the
transparent film is provided relative to exposure light passing through the second surrounding area.
|