US 7,541,070 B2
Method of vapor-depositing strip-shaped substrates with a transparent barrier layer made of aluminum oxide
Nicolas Schiller, Stolpen Ot Helmsdorf (Germany); Steffen Straach, Dresden (Germany); Mathias Räbisch, Hohnstein Ot Hohburkesdorf (Germany); Matthias Fahland, Heidenau (Germany); and Christoph Charton, Dresden (Germany)
Assigned to Fraunhofer Gesellschaft zur Foerderung der angewandten Forschung e.V., Munich (Germany)
Appl. No. 10/536,329
PCT Filed Oct. 16, 2003, PCT No. PCT/EP03/11477
§ 371(c)(1), (2), (4) Date Nov. 17, 2005,
PCT Pub. No. WO2004/050945, PCT Pub. Date Jun. 17, 2004.
Claims priority of application No. 102 55 822 (DE), filed on Nov. 29, 2002.
Prior Publication US 2006/0257585 A1, Nov. 16, 2006
Int. Cl. H05H 1/24 (2006.01)
U.S. Cl. 427—576  [428/469; 204/192.26] 18 Claims
 
1. A method of vapor-depositing a band-like substrate with a transparent aluminum oxide barrier layer, comprising:
(i) applying an incompletely closed metal or metal oxide layer to the substrate by magnetron sputtering, the incompletely closed metal or metal oxide layer having a layer thickness of less than one nanometer and applied to have a thickness that is not enough for a complete atom layer or molecule layer; and
(ii) reactively evaporating aluminum with admission of reactive gas in a band vapor-deposition facility forming a transparent barrier layer of aluminum oxide on the incompletely closed metal or metal oxide layer.