US 7,540,978 B2
Use of an organic matrix material for producing an organic semiconductor material, organic semiconductor material and electronic component
Martin Pfeiffer, Dresden (Germany); Jan Blochwitz-Nimoth, Dresden (Germany); Andrea Lux, Dresden (Germany); and Josef Salbeck, Kassel (Germany)
Assigned to Novaled AG, Dresden (Germany)
Filed on Aug. 03, 2005, as Appl. No. 11/196,491.
Claims priority of application No. 10 2004 037 897 (DE), filed on Aug. 05, 2004; and application No. 04030606 (EP), filed on Dec. 23, 2004.
Prior Publication US 2006/0049397 A1, Mar. 09, 2006
Int. Cl. H01B 1/00 (2006.01); H01L 29/08 (2006.01); H01J 1/62 (2006.01); H01L 31/00 (2006.01)
U.S. Cl. 252—500  [257/40; 257/103; 313/503; 313/504; 136/263] 9 Claims
OG exemplary drawing
 
1. Organic semiconductor material containing a hole transport layer of an organic matrix material doped with an organic dopant by coevaporation characterized in that the organic matrix material comprises at least partly one or more spiro-bifluorene compounds of the formula (I)

OG Complex Work Unit Drawing
and/or the formula (II)

OG Complex Work Unit Drawing
wherein each R and/or R′ in formula (1) and formula (II) is independently selected from the group consisting of hydrogen, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, NH2, N(CH4)2, and NPh2, wherein not all R in formula (I) are simultaneously hydrogen and wherein in formula (II) R is not hydrogen, wherein the glass transition temperature of the organic matrix material being at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material lying at a maximum energy level of 5.4 eV.