US 7,540,976 B2
Sputtering target for forming thin phosphor film
Yoshihiko Yano, Tokyo (Japan); Tomoyuki Oike, Tokyo (Japan); Naruki Kataoka, Tokyo (Japan); Masaki Takahashi, Tokyo (Japan); and Yukio Kawaguchi, Tokyo (Japan)
Assigned to Ifire IP Corporation, (Canada)
Appl. No. 10/548,476
PCT Filed Mar. 05, 2004, PCT No. PCT/JP2004/002803
§ 371(c)(1), (2), (4) Date May 24, 2006,
PCT Pub. No. WO2004/080128, PCT Pub. Date Sep. 16, 2004.
Claims priority of application No. 2003-060601 (JP), filed on Mar. 06, 2003.
Prior Publication US 2006/0254462 A1, Nov. 16, 2006
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/02 (2006.01); C09K 11/77 (2006.01); C09K 11/56 (2006.01); C09K 11/54 (2006.01); C09K 11/72 (2006.01); C23C 14/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); B32B 9/00 (2006.01); B32B 19/00 (2006.01); C04B 14/00 (2006.01); C09C 1/04 (2006.01)
U.S. Cl. 252—301.4S  [252/301.4  R; 252/301.6  R; 252/301.6  S; 204/298.12; 204/298.13; 428/690; 428/917; 106/422; 106/424; 106/425; 106/426; 106/427] 4 Claims
OG exemplary drawing
 
1. A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material,
wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5)
MIIvAxByOzSw   (1)
0.05≤v/x≤5   (2)
1≤y/x≤6   (3)
0.01≤z/(z+w)≤0.85   (4)
0.6≤(v+x+3y/2)/(z+w)≤1.5   (5)
wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2)to (5).