| US 7,540,913 B2 | ||
| Coating solution for forming high dielectric constant thin film and method for forming dielectric thin film using the same | ||
| Jun Hee Bae, Kyungki-do (Korea, Republic of); Seung Hyun Kim, Kyungki-do (Korea, Republic of); Yul Kyo Chung, Kyungki-do (Korea, Republic of); Won Hoon Song, Seoul (Korea, Republic of); Sung Taek Lim, Incheon (Korea, Republic of); and Hyun Ju Jin, Seoul (Korea, Republic of) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Kyungki-Do (Korea, Republic of) | ||
| Filed on Oct. 03, 2006, as Appl. No. 11/541,673. | ||
| Claims priority of application No. 10-2005-0093143 (KR), filed on Oct. 04, 2005. | ||
| Prior Publication US 2007/0077457 A1, Apr. 05, 2007 | ||
| Int. Cl. C09D 185/00 (2006.01) | ||
| U.S. Cl. 106—287.19 | 3 Claims |
| 1. A coating solution for the formation of a high dielectric constant thin film which comprises a titanium alkoxide, a β-diketone
or its derivative, a benzoic acid derivative modified with an electron donating group, water, and a solvent,
wherein the β-diketone or its derivative is pentan-2.4-dione, 5-amino-4-hydroxy-pentanone, or 2-methoxy ethyl acetate, and
the benzonic acid derivative is an aminobenzoic acid, alkylbenzoic acid or alkoxybenzoic acid.
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