| US 7,539,230 B2 | ||
| Semiconductor laser device and method for fabricating the same | ||
| Toru Takayama, Nara (Japan); Tomoya Satoh, Osaka (Japan); Koichi Hayakawa, Okayama (Japan); and Isao Kidoguchi, Hyogo (Japan) | ||
| Assigned to Panasonic Corporation, Osaka (Japan) | ||
| Filed on Jul. 31, 2007, as Appl. No. 11/882,173. | ||
| Claims priority of application No. 2006-220216 (JP), filed on Aug. 11, 2006. | ||
| Prior Publication US 2008/0043797 A1, Feb. 21, 2008 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—50.121 [372/50.1; 372/46.016] | 9 Claims |
| 1. A semiconductor laser device,
wherein in the device, a red-light-emission portion and an infrared-light-emission portion are provided on a single substrate,
the red-light-emission portion has a double heterostructure in which a red-light-emitting active layer made of an InGaP-based
material or an AlGaInP-based material is sandwiched by a first cladding layer made of an AlGaInP-based material of a first
conductivity type and having a red-light-side striped portion for current injection and a second cladding layer made of an
AlGaInP-based material of a second conductivity type,
the infrared-light-emission portion has a double heterostructure in which an infrared-light-emitting active layer made of
a GaAs-based material or an AlGaAs-based material is sandwiched by a third cladding layer made of an AlGaInP-based material
of the first conductivity type and having an infrared-light-side striped portion for current injection and a fourth cladding
layer made of an AlGaInP-based material of the second conductivity type,
when in the first cladding layer, the second cladding layer, the third cladding layer, and the fourth cladding layer, the
Al:Ga contents are represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, respectively, X1>X2 and X3>X4 and X1−X3≤0.1 are satisfied,
the red-light-emitting active layer and the infrared-light-emitting active layer each have a quantum well structure, and
in at least one end face of a resonator contained in each of the red-light-emission portion and the infrared-light-emission
portion, the red-light-emitting active layer and the infrared-light-emitting active layer are each provided with a window
region in a disordered state made by impurity introduction of Zn as an impurity.
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