| US 7,539,049 B2 | ||
| Magnetic random access memory and operation method | ||
| Chien-Chung Hung, Taipei (Taiwan); Ming-Jer Kao, Hsinchu County (Taiwan); Ding-Yeong Wang, Hsinchu County (Taiwan); and Yuan-Jen Lee, Taipei County (Taiwan) | ||
| Assigned to Industrial Technology Research Institute, Hsinchu (Taiwan) | ||
| Filed on Nov. 27, 2007, as Appl. No. 11/946,025. | ||
| Claims priority of application No. 96128409 A (TW), filed on Aug. 02, 2007. | ||
| Prior Publication US 2009/0034322 A1, Feb. 05, 2009 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 977/935] | 20 Claims |
| 1. A magnetic random access memory, comprising:
at lease a first-direction write current line;
a plurality of second-direction write current lines, substantially perpendicularly intersecting with the first-direction write
current line, forming a plurality of intersection regions;
a plurality of magnetic memory cells, respectively located at the intersection regions, receiving an induced magnetic field
in a time sequence, wherein the adjacent at least every two magnetic memory cells are connected in series or parallel, to
form at least a memory unit, wherein an easy axis of a free layer of each of the magnetic memory cells is substantially perpendicular
to a magnetization of a pinned layer, and an including angle of about 45 degrees is between the easy axis and the first-direction
write current line;
a read bit line circuit, connected to a first terminal of the memory unit; and
a read word line circuit, connected to a second terminal of the memory unit.
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