| US 7,539,005 B2 | ||
| Dielectric film production process and capacitor | ||
| Kiyoshi Uchida, Tokyo (Japan); Kenji Horino, Tokyo (Japan); and Hitoshi Saita, Tokyo (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Jul. 26, 2006, as Appl. No. 11/492,943. | ||
| Claims priority of application No. P2005-221676 (JP), filed on Jul. 29, 2005. | ||
| Prior Publication US 2007/0025059 A1, Feb. 01, 2007 | ||
| Int. Cl. H01G 4/06 (2006.01); H01G 4/005 (2006.01) | ||
| U.S. Cl. 361—311 [361/303] | 9 Claims |
| 1. A capacitor comprising:
a dielectric film; and
a first electrode and second electrode formed sandwiching said dielectric film and facing each other,
wherein said dielectric film has a density exceeding 72% of the theoretical density calculated based on the lattice constant,
wherein either or both of said first electrode and said second electrode contain at least one metal selected from the group
consisting of Cu, Ni, Al, stainless steel and a nickel-based alloy, and
wherein said dielectric film comprises particles with a mean particle size of more than 40 nm and less than or equal to 70
nm.
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