| US 7,538,718 B2 | ||
| Radar system | ||
| Hiroshi Ikeda, Tokyo (Japan); and Takeshi Yokoyama, Tokyo (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Jan. 28, 2008, as Appl. No. 12/10,623. | ||
| Claims priority of application No. 2007-019830 (JP), filed on Jan. 30, 2007; and application No. 2007-091302 (JP), filed on Mar. 30, 2007. | ||
| Prior Publication US 2008/0180313 A1, Jul. 31, 2008 | ||
| Int. Cl. G01S 7/40 (2006.01); G01S 13/00 (2006.01); G01S 7/00 (2006.01) | ||
| U.S. Cl. 342—173 [342/27; 342/82; 342/89; 342/165; 342/175; 342/195] | 10 Claims |
| 1. A radar system for detecting a detection target by emitting a transmission wave and receiving a reflected wave reflected
from the detection target, the radar system comprising at least one electronic circuit employing a high electron mobility
transistor,
the electronic circuit including:
switching means for switching a gate voltage to be applied to the high electron mobility transistor, between an operating
voltage and a checking voltage,
detection means for detecting the current value of a drain current in the high electron mobility transistor under application
of the checking voltage, and
determination means for determining occurrence of failure in the high electron mobility transistor by comparing the detected
current value with a first reference value.
|