| US 7,538,598 B1 | ||
| Circuit and method for supplying programming potential at voltages larger than BVDss of programming transistors | ||
| John McCollum, Saratoga, Calif. (US) | ||
| Assigned to Actel Corporation, Mountain View, Calif. (US) | ||
| Filed on Jul. 14, 2008, as Appl. No. 12/172,675. | ||
| Application 12/172675 is a continuation of application No. 11/769169, filed on Jun. 27, 2007, granted, now 7,400,185. | ||
| Application 11/769169 is a continuation of application No. 10/997688, filed on Nov. 24, 2004, granted, now 7,248,094, filed on Jul. 24, 2007. | ||
| Int. Cl. H01H 37/76 (2006.01) | ||
| U.S. Cl. 327—525 [327/526] | 10 Claims |
| 1. A circuit for applying current to a device having a first node and a second node with a potential VPP, the circuit disposed on an integrated circuit and comprising:
a first transistor having a first node coupled to a third node switchably coupleable between a potential of about VPP/2 and ground potential, a second node, and a gate;
a second transistor having a first node coupled to said second node of said first transistor, a second node coupled to the
second node of the antifuse, and a gate;
a bootstrap circuit coupled to and programmably capable of precharging the first node of the device to a selected potential
of VPP or VPP2; and
circuitry coupled to said gate of said first transistor and said gate of said second transistor and configured to, in a current-applying
mode, apply a potential of either zero volts or about VPP/2 to said gate of said first transistor and to apply a potential of about VPP/2 to said gate of said second transistor.
|