| US 7,538,439 B2 | ||
| Multi-chip semiconductor device with high withstand voltage, and a fabrication method of the same | ||
| Hiroshi Fujito, Suita (Japan); and Yasuhiro Takamori, Nishinomiya (Japan) | ||
| Assigned to Ricoh Company, Ltd., Tokyo (Japan) | ||
| Filed on Jun. 05, 2008, as Appl. No. 12/133,715. | ||
| Application 12/133715 is a continuation of application No. 11/378670, filed on Mar. 17, 2006, granted, now 7,399,660. | ||
| Claims priority of application No. 2005-080527 (JP), filed on Mar. 18, 2005. | ||
| Prior Publication US 2008/0246534 A1, Oct. 09, 2008 | ||
| Int. Cl. H01L 23/52 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 257—777 [438/108] | 18 Claims |
| 1. A semiconductor device comprising:
a first semiconductor chip over a substrate and having a function for executing a predetermined electrical operation; and
a second semiconductor chip installed on the first semiconductor chip and configured to integrate a power circuit to receive
an external power supply and to supply power to the first semiconductor chip based on the external power supply.
|