| US 7,538,436 B2 | ||
| Press pack power semiconductor module | ||
| Satish Gunturi, Baden-Dättwil (Switzerland); and Daniel Schneider, Zürich (Switzerland) | ||
| Assigned to ABB Research Ltd, Zurich (Switzerland) | ||
| Appl. No. 10/527,993 PCT Filed Sep. 29, 2003, PCT No. PCT/CH03/00646 § 371(c)(1), (2), (4) Date Oct. 17, 2005, PCT Pub. No. WO2004/030093, PCT Pub. Date Apr. 08, 2004. |
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| Claims priority of application No. 02405836 (EP), filed on Sep. 27, 2002. | ||
| Prior Publication US 2006/0118816 A1, Jun. 08, 2006 | ||
| Int. Cl. H01L 23/48 (2006.01) | ||
| U.S. Cl. 257—773 [257/E23.074] | 9 Claims |
| 1. High-power press pack semiconductor module, comprising:
an electrically conducting base plate;
at least one electrically conducting top plate;
a contact piston in pressing contact with the top plate:
at least one semiconductor chip including semiconductor material, a first main electrode that makes contact with the base
plate forming an interface and a second main electrode that makes contact with the top plate,
a first module power connection in pressing contact with the base plate; and
a second module power connection in pressing contact with the contact piston;
wherein a material is provided adjacent at least one of said first or second main electrodes that, together with the semiconductor
material forms a eutectic alloy or an alloy whose melting point is below that of the semiconductor material, and
wherein at least one of said base plate or top plate is made of metal matrix composite material comprising two-dimensional
randomly distributed short cut graphite fibers in the interface in an Al or Ag matrix, whose coefficient of thermal expansion
is close to that of the semiconductor material, said metal matrix composite material containing said alloy-forming material.
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