| US 7,538,434 B2 | ||
| Copper interconnection with conductive polymer layer and method of forming the same | ||
| Chien-Hsueh Shih, Taipei (Taiwan); Minghsing Tsai, Chu-Pei (Taiwan); Hung-Wen Su, Jhubei (Taiwan); and Shau-Lin Shue, Hsinchu (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Mar. 08, 2005, as Appl. No. 11/75,072. | ||
| Prior Publication US 2006/0202346 A1, Sep. 14, 2006 | ||
| Int. Cl. H01L 23/48 (2006.01) | ||
| U.S. Cl. 257—751 [257/752; 257/753; 257/758; 257/759; 257/774; 257/40; 257/E23.145] | 23 Claims |
| 1. A semiconductor device, comprising:
a substrate;
a first dielectric layer over the substrate, the first dielectric layer having an opening on a first upper surface;
a copper-based metallic layer filling said opening of said first dielectric layer;
a first conductive polymer layer completely covering and in contact with the upper surface of said copper-based metallic layer,
the first conductive polymer layer having a second upper surface located further from the substrate than the first upper surface;
and
a second dielectric layer over both the first dielectric layer and the first conductive polymer layer and in physical contact
with at least a portion of the first dielectric layer.
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