US 7,538,403 B2
PIN diode structure with zinc diffusion region
Xiang Gao, Edison, N.J. (US); Alex Ceruzzi, Princton Junction, N.J. (US); Linlin Liu, Hillsborough, N.J. (US); and Stephen Schwed, Bridgewater, N.J. (US)
Assigned to Emcore Corporation, Albuquerque, N. Mex. (US)
Filed on Sep. 19, 2005, as Appl. No. 11/230,959.
Claims priority of provisional application 60/611152, filed on Sep. 20, 2004.
Prior Publication US 2006/0060933 A1, Mar. 23, 2006
Int. Cl. H01L 27/15 (2006.01)
U.S. Cl. 257—431  [257/438; 257/461; 257/463; 257/E31.001] 9 Claims
OG exemplary drawing
 
1. A PIN photodiode comprising:
a substrate;
a first type electrode layer on the substrate;
a first layer comprising a first region of intrinsic material over a portion of the first-type electrode layer;
a first type window layer over said first layer;
an island shaped region comprising a first portion of intrinsic material over said window layer;
a dielectric layer over at least a peripheral portion of said island shaped region wherein the island shaped region has an opening; and
a diffused dopant beneath an area of the opening to form a PN junction that extends into said first layer.