US 7,538,398 B2
System and method for forming a semiconductor device source/drain contact
Chung-Hu Ke, Taipei (Taiwan); Ching-Ya Wang, Taipei (Taiwan); and Wen-Chin Lee, HsinChu (Taiwan)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan)
Filed on Jun. 21, 2007, as Appl. No. 11/766,773.
Prior Publication US 2008/0315321 A1, Dec. 25, 2008
Int. Cl. H01L 29/417 (2006.01)
U.S. Cl. 257—382  [257/383; 257/249; 257/E29.116] 14 Claims
OG exemplary drawing
 
1. A semiconductor device comprising: a substrate; a source/drain region disposed in the substrate; at least one non-silicided conductive layer comprising a first barrier layer disposed over and in direct contact with the source/drain region; one or more contact holes formed over the non-silicided conductive layer; and one or more contact hole filling metals comprising a second barrier layer and a filling conductive layer disposed over and directly contacting the at least one non-silicided conductive layer, and wherein a first contact area between the at least one non-silicided conductive layer and the source/drain region is substantially larger than a second contact area between the one or more contact hole filling metals and the at least one non-silicided conductive layer.