| US 7,538,366 B2 | ||
| Nitride semiconductor device | ||
| Wataru Saito, Kanagawa-ken (Japan); Akira Yoshioka, Kanagawa-ken (Japan); Hidetoshi Fujimoto, Kanagawa-ken (Japan); Yasunobu Saito, Tokyo (Japan); Takao Noda, Kanagawa-ken (Japan); Tomohiro Nitta, Kanagawa-ken (Japan); and Yorito Kakiuchi, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Apr. 25, 2007, as Appl. No. 11/739,874. | ||
| Claims priority of application No. 2006-122640 (JP), filed on Apr. 26, 2006. | ||
| Prior Publication US 2007/0254431 A1, Nov. 01, 2007 | ||
| Int. Cl. H01L 27/088 (2006.01) | ||
| U.S. Cl. 257—194 [257/242; 257/215; 257/401; 257/E33.028] | 19 Claims |
| 1. A nitride semiconductor device comprising:
a conductive substrate;
a first semiconductor layer made of AlXGa1−XN (0≤X≤1) of a first conductivity type provided on the substrate;
a second semiconductor layer made of a first nitride semiconductor provided on the first semiconductor layer;
a third semiconductor layer made of a second nitride semiconductor provided on the second semiconductor layer, the second
nitride semiconductor being undoped or of n-type and having a wider bandgap than the first nitride semiconductor;
a first main electrode connected to the third semiconductor layer and the substrate;
a second main electrode connected to the third semiconductor layer; and
a control electrode provided on the third semiconductor layer.
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