	US 7,538,351 B2
	Method for forming an SOI structure with improved carrier mobility and ESD protection
Hung-Wei Chen, Hsin-Chu (Taiwan); Hsun-Chih Tsao, Hsin-Chu (Taiwan); Kuang-Hsin Chen, Hsin-Chu (Taiwan); and Di-Hong Lee, Hsin-Chu (Taiwan)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan)
Filed on Mar. 23, 2005, as Appl. No. 11/89,405.
Prior Publication US 2006/0214226 A1, Sep. 28, 2006
Int. Cl. H01L 29/10 (2006.01)

U.S. Cl. 257—67 [257/E27.062; 438/152]

28 Claims

1. A semiconductor device comprising:

a semiconductor substrate comprising a pre-selected surface orientation and crystal direction;

a first insulator layer overlying the semiconductor substrate;

a first semiconductor active region, overlying the first insulator layer, having a first surface orientation selected from the group consisting of (100) and (110);

a trench isolation structure overlying the first insulator layer and neighboring the first semiconductor active region;

an opening disposed in the trench isolation structure and the first insulator layer and extending through the trench isolation structure and the first insulator layer;

a second insulator layer disposed in the opening only and overlying the semiconductor substrate;

a second semiconductor active region, disposed in the opening only and not extending out of the opening, having a second surface orientation selected from the group consisting of (110) and (100) different from the first surface orientation, and overlying the second insulator layer; and

wherein MOS devices comprising a first MOS device disposed on the first semiconductor active region and a second MOS device disposed on the second semiconductor active region.