| US 7,538,349 B2 | ||
| Thin film transistor having a three-portion gate electrode and liquid crystal display using the same | ||
| Myung-Koo Kang, Seoul (Korea, Republic of); Hyun-Jae Kim, Seongnam (Korea, Republic of); Sook-Young Kang, Seoul (Korea, Republic of); and Woo-Suk Chung, Anyang (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd, Suwon-Si (Korea, Republic of) | ||
| Filed on Jan. 09, 2007, as Appl. No. 11/621,277. | ||
| Application 11/621277 is a continuation of application No. 10/500514, filed on Dec. 03, 2004, granted, now 7,183,574. | ||
| Prior Publication US 2007/0108447 A1, May 17, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 257—66 [257/E21.134] | 6 Claims |
| 1. A thin film transistor comprising:
a crystalline semiconductor pattern formed on an insulating substrate and comprising a channel region and source and drain
regions opposite with respect to the channel region, and
a gate electrode overlapping with the channel region and comprising a first portion, a second portion on the channel region
connected to one end of the first portion and a third portion on the channel region connected to another end of the first
portion, the second portion and the third portion extending in a different direction from a direction of the first portion.
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