| US 7,538,346 B2 | ||
| Semiconductor device | ||
| Hsien-Wei Chen, Tainan County (Taiwan); Shih-Hsun Hsu, Keelung (Taiwan); and Hsueh-Chung Chen, Taipei County (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on May 29, 2007, as Appl. No. 11/754,394. | ||
| Prior Publication US 2008/0296570 A1, Dec. 04, 2008 | ||
| Int. Cl. H01L 23/58 (2006.01) | ||
| U.S. Cl. 257—48 [257/127; 257/170; 257/409; 257/484] | 11 Claims |
| 1. A semiconductor device, comprising:
a substrate; and
a first wiring layer overlying the substrate, the first wiring layer comprising a first wiring area surrounded by a first
seal ring comprising a first monitor circuit isolated by a first dielectric layer embedded in a continuous conductive layer
and spaced apart from the first wiring area, wherein the first monitor circuit comprises:
a pair of first monitor pads, isolated by the first dielectric layer, spaced apart from each other; and
a pair of first connection elements, isolated by the first dielectric layer, respectively extending from the first monitor
pads, the first connection elements proximity to each other.
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