| US 7,538,045 B2 | ||
| Coating process to enable electrophoretic deposition | ||
| Tania Bhatia, Middletown, Conn. (US); Neil Baldwin, Mission Viejo, Calif. (US); and John E. Holowczak, South Windsor, Conn. (US) | ||
| Assigned to United Technologies Corporation, Hartford, Conn. (US) | ||
| Filed on Feb. 10, 2006, as Appl. No. 11/351,635. | ||
| Application 11/351635 is a division of application No. 10/914905, filed on Aug. 09, 2004, abandoned. | ||
| Prior Publication US 2006/0244143 A1, Nov. 02, 2006 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—785 [438/763; 438/648; 257/703; 257/E23.002] | 9 Claims |
| 1. A process for the deposition of protective coatings to complex shaped silicon (Si) based substrates, comprising steps in
an order of:
providing a complex shaped Si-containing substrate;
depositing an electrically conductive layer upon a surface of the substrate in a non-oxidizing environment by a method selected
from the group consisting of chemical vapor deposition, physical vapor deposition and melt coating;
depositing at least one barrier layer by electrophoretic deposition (EPD) as a protective coating; and
depositing an intermediate insulating layer between the substrate and the electrically conductive layer,
wherein the barrier layer is selected from the group consisting of yttrium monosilicate, yttrium disilicate, rare earth silicates,
barium-strontium-aluminosilicates, niobium oxide, tantalum oxide, zirconium oxide, hafnium oxide, titanium oxide, mullite
and mixtures thereof.
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