| US 7,538,012 B2 | ||
| Fluorine-containing carbon film forming method | ||
| Tadahiro Ohmi, Sendai (Japan); and Masaki Hirayama, Sendai (Japan) | ||
| Assigned to Tadahiro OHMI, Sendai-shi (Japan); and Tokyo Electron Limited, Tokyo (Japan) | ||
| Appl. No. 10/558,080 PCT Filed May 19, 2004, PCT No. PCT/JP2004/006749 § 371(c)(1), (2), (4) Date Aug. 16, 2006, PCT Pub. No. WO2004/105114, PCT Pub. Date Dec. 02, 2004. |
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| Claims priority of application No. 2003-144613 (JP), filed on May 22, 2003. | ||
| Prior Publication US 2007/0020940 A1, Jan. 25, 2007 | ||
| Int. Cl. H01L 21/322 (2006.01) | ||
| U.S. Cl. 438—474 | 11 Claims |
| 1. A fluorine-containing carbon film forming method of forming a fluorine-containing carbon film on a to-be-processed substrate,
comprising:
a first process of carrying out plasma excitation of a rare gas, and carrying out a surface treatment of the to-be-processed
substrate with the use of the thus-plasma-excited rare gas with a substrate processing apparatus; and
a second process of forming the fluorine-containing carbon film on the to-be-processed substrate having undergone the surface
treatment in said first process, wherein:
in said substrate processing apparatus, a microwave transmitting window is provided to face the to-be-processed substrate,
microwaves are introduced in a process space above the to-be-processed substrate via the microwave window from a microwave
antenna electrically connected to a microwave power source and provided on the microwave transmitting window, and plasma excitation
of a plasma gas including the rare gas is carried out.
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