| US 7,538,011 B2 | ||
| Method of manufacturing a semiconductor device | ||
| Shunpei Yamazaki, Setagaya (Japan); Osama Nakamura, Atsugi (Japan); Masayuki Kajiwara, Atsugi (Japan); Junichi Koezuka, Atsugi (Japan); Koji Dairiki, Atsugi (Japan); Toru Mitsuki, Atsugi (Japan); Toru Takayama, Atsugi (Japan); Hideto Ohnuma, Atsugi (Japan); Taketomi Asami, Atsugi (Japan); and Mitsuhiro Ichijo, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Aug. 07, 2007, as Appl. No. 11/882,907. | ||
| Application 11/882907 is a division of application No. 10/072931, filed on Feb. 12, 2002, granted, now 7,316,947. | ||
| Claims priority of application No. 2001-040837 (JP), filed on Feb. 16, 2001. | ||
| Prior Publication US 2007/0298555 A1, Dec. 27, 2007 | ||
| Int. Cl. H01L 21/322 (2006.01) | ||
| U.S. Cl. 438—471 [438/486; 438/488; 257/E21.318; 257/E21.411] | 42 Claims |
| 1. A method of manufacturing a semiconductor device comprising the steps of:
adding a metallic element to a first semiconductor film having an amorphous structure;
crystallizing the first semiconductor film to form a first semiconductor film having a crystalline structure;
forming a barrier layer on a surface of the first semiconductor film having a crystalline structure;
forming a second semiconductor film on the barrier layer;
forming a third semiconductor film comprising a noble gas element on the second semiconductor film;
gettering the metallic element into the third semiconductor film to remove or reduce the amount of the metallic element within
the first semiconductor film having a crystalline structure; and
removing the second semiconductor film and the third semiconductor film.
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